. . We value the optimism that we bring to our clients and build the relationships that will help you achieve your goals. In a world that is always evolving, we understand that your marketing strategies must adapt, but not at the expense of your brand’s integrity. We get it. Our job is to continue to build on your success, while helping you get to the next level. We are proud of our team of highly experienced and dedicated professionals that continue to develop innovative ideas to support you and your business. read more1. Field of the Invention
The present invention relates to semiconductor fabrication and, more particularly, to a transistor and a method of fabricating the same.
2. Description of the Related Art
As integration density and operating speed of semiconductor devices are increased, a short channel effect such as a punch-through phenomenon in a transistor becomes a serious problem. The short channel effect is caused by an electric field in a channel region being increased as a result of a reduced channel length. In order to solve this problem, studies have been made on a SIS (Silicon-Insulator-Silicon) type transistor having a high-dielectric-constant insulator film on a gate electrode, which is formed on a semiconductor substrate. Since a current flows in a channel region defined below the insulator film, a high field effect can be obtained by the SIS type transistor.
An example of a conventional SIS type transistor is illustrated in FIG. 1. As shown in FIG. 1, a gate electrode 105 is formed on a semiconductor substrate 101 including a field region 102 and a memory cell region 103. On both sides of the gate electrode 105, insulator films 107 and 109 are formed to insulate the gate electrode 105 from a source region (not shown) and a drain region (not shown) formed on the semiconductor substrate 101. The insulator film 107 is formed on the gate electrode 105 to expose the field region 102. The insulator film 109 is formed on the gate electrode 105 to expose the memory cell region 103. Here, the insulator film 107 may be a silicon oxide film formed by a thermal oxidation process, whereas the insulator film 109 may be a silicon nitride film formed by a CVD (Chemical Vapor Deposition) process.
When a positive voltage is applied to the gate electrode 105, a channel is formed in a portion of the semiconductor substrate 101 where the insulator film 107 is not formed and the field region 102 is
Related links:
Comments